TiO<sub>2</sub> nanofilm growth by Ti ion implantation and thermal annealing in O<sub>2</sub> atmosphere

Xiao-Dong ZHOU; Si-Hua ZHOU; Xian-Ke SUN; Yun-Li ZHANG

doi:10.13538/j.1001-8042/nst.26.030507

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TiO₂ nanofilm growth by Ti ion implantation and thermal annealing in O₂ atmosphere

NUCLEAR PHYSICS AND INTERDISCIPLINARY RESEARCH | Updated：2021-01-20

- TiO₂ nanofilm growth by Ti ion implantation and thermal annealing in O₂ atmosphere
- Nuclear Science and Techniques Vol. 26, Issue 3, Article number: 030507(2015)
- Affiliations：
  
  1.School of Physics and Electromechnical Engineering, Zhoukou Normal University, Zhoukou 466001, China
- Author bio：
  
  Corresponding author, zhouxd516@163.com
- Funds：
- DOI：10.13538/j.1001-8042/nst.26.030507
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Xiao-Dong ZHOU, Si-Hua ZHOU, Xian-Ke SUN, et al. TiO₂ nanofilm growth by Ti ion implantation and thermal annealing in O₂ atmosphere. [J]. Nuclear Science and Techniques 26(3):030507(2015)
DOI：

Xiao-Dong ZHOU, Si-Hua ZHOU, Xian-Ke SUN, et al. TiO₂ nanofilm growth by Ti ion implantation and thermal annealing in O₂ atmosphere. [J]. Nuclear Science and Techniques 26(3):030507(2015) DOI： 10.13538/j.1001-8042/nst.26.030507.

摘要

Abstract

TiO,2, nanofilms on surface of fused silica were fabricated by Ti ion implantation and subsequent thermal annealing in oxygen ambience. The silica glasses were implanted by 20 kV Ti ions to 1.5×10,17, ions/cm,2, on an implanter of metal vapor vacuum arc (MEVVA) ion source. Effects of annealing parameters on formation, growth and phase transformation of the TiO,2, nanofilms were studied in detail. Optical absorption spectroscopy, Raman scattering spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy measurements were done to figure out formation mechanism of the TiO,2, nanofilms. The formation of TiO,2, nanofilms was due to out-diffusion of the implanted Ti ions to the substrate surface, where they were oxidized into TiO,2, nanoparticles. Formation, phase, and thickness of the TiO,2, nanofilms can be well tailored by controlling annealing parameters.

关键词

Keywords

Ion implantationThermal annealingTiO2nanofilmsCharacterization

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Joint Research Center, Nuctech Company Limited

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College of Nuclear Science and Technology, Joint Laboratory of Jinping Ultra-low Radiation Background Measurement of Ministry of Ecology and Environment and Beijing Normal University, Key Laboratory of Beam Technology of Ministry of Education, Beijing Normal University

Key Laboratory of Dark Matter and Space Astronomy, Chinese Academy of Sciences

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TiO2 nanofilm growth by Ti ion implantation and thermal annealing in O2 atmosphere

DOI：10.13538/j.1001-8042/nst.26.030507

摘要

Abstract

关键词

Keywords

references

TiO₂ nanofilm growth by Ti ion implantation and thermal annealing in O₂ atmosphere