Gang YUAN; Jing GAO; Xuhui SUN; Xingtai ZHOU

doi:10.13538/j.1001-8042/nst.22.272-276

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Electronic structure of In₂O₃ nanowires synthesized at low temperature

LOW ENERGY ACCELERATOR AND RADIATION APPLICATIONS | Updated：2021-01-29

- Electronic structure of In₂O₃ nanowires synthesized at low temperature Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.22, Issue 5, (2011)
- Affiliations：
  
  Shanghai Institute of Applied Physics, Chinese Academy of Sciences,Shanghai,China,201800;Institute of Functional Nano and Soft Materials, and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Soochow University,Suzhou,China,215123
- Author bio：
- Funds：
- DOI：10.13538/j.1001-8042/nst.22.272-276 CLC：
- Published：20 October 2011，
  
  Published Online：，
  
  Received：09 March 2011，
  
  Revised：，
  
  Accepted：
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Cite this article
Gang YUAN, Jing GAO, Xuhui SUN, et al. Electronic structure of In₂O₃ nanowires synthesized at low temperature. [J]. Nuclear Science and Techniques 22(5):272-276(2011)
DOI：

Gang YUAN, Jing GAO, Xuhui SUN, et al. Electronic structure of In₂O₃ nanowires synthesized at low temperature. [J]. Nuclear Science and Techniques 22(5):272-276(2011) DOI： 10.13538/j.1001-8042/nst.22.272-276.

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