Cong QIAN; En-Xia ZHANG; Zheng-Xuan ZHANG; Feng ZHANG; Cheng-Lu LIN; Ying-Min WANG; Xiao-He WANG; Gui-Ru ZHAO; Yun-Fei EN; Hong-Wei LUO; Qian SHI

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Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS | 更新时间：2021-01-29

- Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX 封面论文增强出版
- Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX
- 核技术（英文版） 2005年 16卷第5期 (2005)
- 作者机构：
  
  Shanghai Institute of Microsystems and Information Technology, the Chinese Academy of Sciences,Shanghai,200050;No. Institute of China Aerospace Times Electronics Corporation,Xi'an,710054;China CEPREI Laboratories (No.5 Institute of Electronics, China Ministry of Information Industry,Guangzhou,510610
- 作者简介：
- 基金信息：
- DOI：中图分类号： TN386.1
- 纸质出版日期：2005-10-01，
  
  网络出版日期：，
  
  收稿日期：2005-06-30，
  
  修回日期：，
  
  录用日期：
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引用本文
Cong QIAN, En-Xia ZHANG, Zheng-Xuan ZHANG, 等. Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX[J]. 核技术（英文版）, 2005, 16(5):260-265.

Cong QIAN, En-Xia ZHANG, Zheng-Xuan ZHANG, et al. Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX[J]. Nuclear Science and Techniques, 2005, 16(5):260-265.
Cong QIAN, En-Xia ZHANG, Zheng-Xuan ZHANG, 等. Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX[J]. 核技术（英文版）, 2005, 16(5):260-265. DOI：

Cong QIAN, En-Xia ZHANG, Zheng-Xuan ZHANG, et al. Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX[J]. Nuclear Science and Techniques, 2005, 16(5):260-265. DOI：

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Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX 封面论文 增强出版

Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX 封面论文增强出版