Zhan-Gang Zhang; Yun Huang; Yun-Fei En; Zhi-Feng Lei

doi:10.1007/s41365-019-0570-x

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Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices

NUCLEAR ELECTRONICS AND INSTRUMENTATION | 更新时间：2021-02-01

- Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices 封面论文增强出版
- Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices
- 核技术（英文版） 2019年 30卷第3期 (2019)
- 作者机构：
  
  Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou,China,510610
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China;Science and Technology Research Project of Guangdong, China;Science and Technology Plan Project of Guangzhou, China
- DOI：10.1007/s41365-019-0570-x 中图分类号：
- 纸质出版日期：2019-03-01，
  
  网络出版日期：2019-02-14，
  
  收稿日期：2018-02-10，
  
  修回日期：2018-08-19，
  
  录用日期：2018-08-21
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Zhan-Gang Zhang, Yun Huang, Yun-Fei En, 等. Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices[J]. 核技术（英文版）, 2019, 30(3):47

Zhan-Gang Zhang, Yun Huang, Yun-Fei En, et al. Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices[J]. Nuclear Science and Techniques, 2019, 30(3):47
Zhan-Gang Zhang, Yun Huang, Yun-Fei En, 等. Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices[J]. 核技术（英文版）, 2019, 30(3):47 DOI： 10.1007/s41365-019-0570-x.

Zhan-Gang Zhang, Yun Huang, Yun-Fei En, et al. Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices[J]. Nuclear Science and Techniques, 2019, 30(3):47 DOI： 10.1007/s41365-019-0570-x.

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Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices 封面论文 增强出版

Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices 封面论文增强出版