RBS ANALYSIS OF DAMAGE AND ANNEALING OF ION IMPLANTED InP:Fe

RBS ANALYSIS OF DAMAGE AND ANNEALING OF ION IMPLANTED InP:Fe 1 first-author 1 1 1 Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China Rutherford backscattering spectroscopy (RBS) with channeling technique has been used to analyze the damage and its annealing of Si + and P + implanted InP:Fe. 150 keV Si ions and 160 keV P ions were implanted with doses ranging from 1×10 13 to 1×10 15 / cm 2 at room temperature, 200℃ and 77K. Thermal annealing was performed in a conventional open tube furnace under flow of pure N 2 for 15 minutes. Annealing temperature was chosen from 150℃ to 800℃. It was found that a dose of 8×10 13 /cm 2 Si + was sufficient to produce an amorphous layer at room temperature and its epitaxial regrowth takes place at temperature below 150 ℃. The epitaxial regrowth of amorphous layer produced by 1×10 14 /cm 2 Si ions occurs from both substrate and surface while that produced by co-implantation of 1×10 14 /cm 2 Si ions with the same dose of P ions takes place from substrate only. It was also noticed that for the former sample, its amorphized layer can be nearly completely recrystallized by epitaxial growth at 650 ℃, but for the latter much residual disorder remains even after annealing at 750 ℃. As for 77K implant at dose as low as 5×10 13 /cm 2 , Si ions begin to produce an amorphous layer that can be wholly reordered at 750℃. Samples implanted at 200℃ remain crystalline only with small fraction of disorder due to self-annealing effect during the implantation. The damage annealing in the implanted layer corresponds to the change of electrical parameters got from Hall measurements. InP Ion implantation RBS analysis Damage REFERENCES E.F. Kennedy . Appl. Phys. Lett. , 30 ( 1981 ), 5 : 375 . Appl. Phys. Lett. V.L. Wrick et al ., Electr. lett. , 17 ( 1981 ), 752 . Electr. lett. P. Auvray et al ., J. Appl. Phys. , 53 ( 1982 ), 9 : 5202 . J. Appl. Phys. J.D. Woodhouse et al ., Solid State Electr. , 27 ( 1984 ), 7 : 677 . Solid State Electr. 1990-05-01 2021-02-05 1990 Nuclear Science and Techniques 1-2 1