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EFFECT OF TOTAL IRRADIATION DOSE ON MOSFETs/SOI

Updated：2021-02-05

- EFFECT OF TOTAL IRRADIATION DOSE ON MOSFETs/SOI Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.5, Issue 4, (1994)
- Affiliations：
  
  Xinjiang Institute of Physics, the Chinese Academy of Sciences,Urumqi,830011;Shanghai Institute of Metallurgy, the Chinese Academy of Sciences,Shanghai,200050;Jiangsu Petrochemical Industry College,Changzhou,213016
- Author bio：
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- DOI： CLC：
- Published：01 November 1994，
  
  Published Online：，
  
  Received：02 May 1994，
  
  Revised：，
  
  Accepted：
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Jianxia Gao, Rongliang Yan, Diyuan Ren, et al. EFFECT OF TOTAL IRRADIATION DOSE ON MOSFETs/SOI. [J]. Nuclear Science and Techniques 5(4):236-240(1994)
DOI：

Jianxia Gao, Rongliang Yan, Diyuan Ren, et al. EFFECT OF TOTAL IRRADIATION DOSE ON MOSFETs/SOI. [J]. Nuclear Science and Techniques 5(4):236-240(1994) DOI：

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EFFECT OF TOTAL IRRADIATION DOSE ON MOSFETs/SOI Cover Article Enhanced Publication