Huizhen Liu; Dexin Cao; Dezhang Zhu; Fuying Zhu; Jianqing Cao

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THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs

Updated：2021-02-05

- THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.05, Issue 1, (1994)
- Affiliations：
  
  Laboratory of Nuclear Analysis Techniques (LNAT), Shanghai Division, the Chinese Academia of Sciences; Institute of Nuclear Research, the Chinese Academy of Sciences,Shanghai,China,201800
- Author bio：
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- DOI： CLC：
- Published：01 February 1994，
  
  Published Online：，
  
  Received：05 June 1993，
  
  Revised：，
  
  Accepted：
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Huizhen Liu, Dexin Cao, Dezhang Zhu, et al. THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs. [J]. Nuclear Science and Techniques 05(1):51-57(1994)
DOI：

Huizhen Liu, Dexin Cao, Dezhang Zhu, et al. THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs. [J]. Nuclear Science and Techniques 05(1):51-57(1994) DOI：

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THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs Cover Article Enhanced Publication