THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs

THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs 1 first-author 1 1 1 1 Laboratory of Nuclear Analysis Techniques (LNAT), Shanghai Division, the Chinese Academia of Sciences; Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800, China Laboratory of Nuclear Analysis Techniques (LNAT), Shanghai Division, the Chinese Academia of Sciences; Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800, China The behaviors of Si ions implanted into (100) GaAs at liquid nitrogen temperature with energy of 48 keV at the doses of 1×10 15 —5×10 15 ions / cm 2 has been investigated in this study. The Rutherford backscattering-channeling (RBS-C) combined with particle induced X-ray emission (PIXE) has been used to determine the sites of the Si atoms in the GaAs substrate. The four-point probe was used to measure the resistance of the GaAs before and after Si ions implantation. The experimental results show that Si atoms occupy not only on Ga site but also on As site. The sheet resistivity of GaAs reduced from 1×10 9 Ω/□ to 4.5×10 6 Ω /□ after Si ions implanted, and to 4.0 × 10 4 Ω/□ after annealing at 850°C in argon. These results are consistent with some other investigations, for instance, the results of G.Braunstein et al and R. S. Bhattacharya et al , although the implantation condition is not the same. RBS-C PIXE GaAs Ion implantation REFERENCES Rai A K , Bhattacharya R S , Pronko P P . Appl Phys Lett , 1982 ; 41 ( 11 ): 1086 Appl Phys Lett Vitali G , Kalitzova M , Pashov N et al . Appl Phys , 1988 ; A46 : 185 Appl Phys Patel K K , Bensalem R , Shahid M A et al . Nucl Instr Meth , 1985 ; B7/8 : 418 Nucl Instr Meth Nishi Hidetoshi . Nucl Instr Meth , 1985 ; B7/8 : 395 Nucl Instr Meth Smulders P J M , Boerma D O , Shaanan M . Nucl Instr Meth , 1990 ; B45 : 450 Nucl Instr Meth Bhattacharya R S , Rai A K , Yeo Y K et al . Nucl Instr Meth , 1983 ; 209 / 210 : 637 Nucl Instr Meth Bhattacharya R S , Pronko P P . Nucl Instr Meths , 1983 ; 218 : 515 Nucl Instr Meths Braunstein G , Chen Samuel , Lee S-Tong et al . Nucl Instr Meths , 1991 ; B59/60 : 1032 Nucl Instr Meths Anderson J U , Chechenin N G , Zhang Z H . Appl Phys Lett , 1981 ; 39 : 758 Appl Phys Lett 1993-06-05 1994-02-01 2021-02-05 1994 Nuclear Science and Techniques 01 05