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THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs

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- THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs 封面论文增强出版
- THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs
- 核技术（英文版） 1994年 05卷第1期 (1994)
- 作者机构：
  
  Laboratory of Nuclear Analysis Techniques (LNAT), Shanghai Division, the Chinese Academia of Sciences; Institute of Nuclear Research, the Chinese Academy of Sciences,Shanghai,China,201800
- 作者简介：
- 基金信息：
- DOI：中图分类号：
- 纸质出版日期：1994-02-01，
  
  网络出版日期：，
  
  收稿日期：1993-06-05，
  
  修回日期：，
  
  录用日期：
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刘惠珍, 曹德新, 朱德彰, 等. THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs[J]. 核技术（英文版）, 1994, 05(1):51-57.

Huizhen Liu, Dexin Cao, Dezhang Zhu, et al. THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs[J]. Nuclear Science and Techniques, 1994, 05(1):51-57.
刘惠珍, 曹德新, 朱德彰, 等. THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs[J]. 核技术（英文版）, 1994, 05(1):51-57. DOI：

Huizhen Liu, Dexin Cao, Dezhang Zhu, et al. THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs[J]. Nuclear Science and Techniques, 1994, 05(1):51-57. DOI：

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THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs 封面论文 增强出版

THE BEHAVIORS OF 48 keV Si IONS IMPLANTED INTO (100) GaAs 封面论文增强出版