ION BEAM AND SIMS ANALYSIS ON DAMAGE OF GaAs DOPED WITH N⁺

ION BEAM AND SIMS ANALYSIS ON DAMAGE OF GaAs DOPED WITH N + 1 first-author 1 2 1 Department of Physics, Beijing Normal University; Department of Physics, Beijing Normal University; Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875, China Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875, China The Rutherford backscattering (RBS) spectra of N + -implanted GaAs are measured with a He + ion beam of 2.1 MeV. The backscattering yield along < 100 > aligned incidence increases with the increase in implanted doses. The depth profiles of nitrogen and arsenic are measured by secondary ion mass spectrometer (SIMS). The diffusion of nitrogen in the implanted layers is explained as interstitial migration. The damage is very severe during the ion implantation, and it can be recovered partly by annealing. The two-step annealing improves the effect obviously. The calculation on distribution of damage shows that the recovery is proceeded from the inner side to the surface during the annealing. The mechanism of damage is discussed briefly. Ion implantation Damage RBS channeling SIMS Depth profile REFERENCES Liu X , Pistol M E , Samuelson L . Phys Rev , 1990 ; B42 ( 12 ): 7504 Phys Rev Pankove J I , Miller E A , Berkeyheiser J E et al . RCA Rev , 1971 ; 32 : 383 RCA Rev Makamura S , Senoh M , Mukai T . Jpn J Appl Phys , 1991 ; 30 ( 10A ): L1708 Jpn J Appl Phys Khan M A , Hove J M V , Kuznia J N et al . Appl Phys Lett , 1991 ; 58 ( 21 ): 2408 Appl Phys Lett Igarashi O . Jpn J Appl Phys , 1988 ; 27 ( 5 ): 790 Jpn J Appl Phys Igarashi O , Okada Y . Jpn J Appl Phys , 1985 ; 24 ( 10 ): L792 Jpn J Appl Phys Lin Zhenjin , Yang Xizhen , Liu Xitian et al . J Lumine , 1988 ; 40, 41 : 909 J Lumine Mayer J W , Eriksson L , Davies J A . Ion implantation in semiconductors . New York : Academic Press , 1970 Ion implantation in semiconductors Osamura K , Murakami Y . Jpn J Appl Phys , 1969 ; 8 : 967 Jpn J Appl Phys Lichter B D , Sommelet P . Trans AIME , 1969 ; 245 : 99 Trans AIME Weiser K . In: Willardson R K , Goering H C , eds. Compound semiconductors . New York : Reinhold , 1962 : Vol.1 , 471 Compound semiconductors Kachare A H , Spitzer W G , Kahan A et al . J Appl Phys , 1973 ; 44 ( 10 ): 4393 J Appl Phys Ziegler J F , Chu Weikan . New use of ion accelerators . New York : Plenum . 1975 : 135 New use of ion accelerators Ziegler J F . J Appl Phys , 1972 ; 43 ( 7 ): 2937 J Appl Phys Walker R S , Thompson D A , Poehman S W . Radiation Effects , 1977 ; 34 ( 4 ): 157 Radiation Effects Chadderton L , Eisen F H . Proc 1st int conf on ion implantation . New York : Gordon and Breach , 1971 : 445 1993-07-30 1994-04-12 1994-08-01 2021-02-05 1994 Nuclear Science and Techniques 3 5