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Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs

Updated：2021-02-05

- Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.7, Issue 3, (1996)
- Affiliations：
  
  Xinjiang Institute of Physics, the Chinese Academy of Sciences,Urumqi,830011
- Author bio：
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- DOI： CLC：
- Published：01 August 1996，
  
  Published Online：，
  
  Received：20 December 1995，
  
  Revised：，
  
  Accepted：
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Cite this article
Di-Yuan Ren, Xue-Feng Yu, Wu Lu, et al. Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs. [J]. Nuclear Science and Techniques 7(3):183-186(1996)
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Di-Yuan Ren, Xue-Feng Yu, Wu Lu, et al. Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs. [J]. Nuclear Science and Techniques 7(3):183-186(1996) DOI：

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Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs Cover Article Enhanced Publication