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Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs

更新时间：2021-02-05

- Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs 封面论文增强出版
- Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs
- 核技术（英文版） 1996年 7卷第3期 (1996)
- 作者机构：
  
  Xinjiang Institute of Physics, the Chinese Academy of Sciences,Urumqi,830011
- 作者简介：
- 基金信息：
- DOI：中图分类号：
- 纸质出版日期：1996-08-01，
  
  网络出版日期：，
  
  收稿日期：1995-12-20，
  
  修回日期：，
  
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任迪远, 余学锋, 陆妩, 等. Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs[J]. 核技术（英文版）, 1996, 7(3):183-186.

Di-Yuan Ren, Xue-Feng Yu, Wu Lu, et al. Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs[J]. Nuclear Science and Techniques, 1996, 7(3):183-186.
任迪远, 余学锋, 陆妩, 等. Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs[J]. 核技术（英文版）, 1996, 7(3):183-186. DOI：

Di-Yuan Ren, Xue-Feng Yu, Wu Lu, et al. Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs[J]. Nuclear Science and Techniques, 1996, 7(3):183-186. DOI：

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Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs 封面论文 增强出版

Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs 封面论文增强出版