Total dose radiation characteristics of n-channel MOSFETs fabricated using FIPOS technology

Total dose radiation characteristics of n-channel MOSFETs fabricated using FIPOS technology 1 first-author 1 1 2 3 Department of Electronic Engineering, Fudan University, Shanghai 200433 Department of Electronic Engineering, Fudan University, Shanghai 200433 Xinjiang Institute of Physics, the Chinese Academy of Sciences, Urumqi 830011 Xinjiang Institute of Physics, the Chinese Academy of Sciences, Urumqi 830011 Jiangsu Petrochemical Industry College, Changzhou 213016 Jiangsu Petrochemical Industry College, Changzhou 213016 High quality SOI (silicon on insulator) materials were fabricated using highly selective and self-stopping full isolation by porous oxidized silicon (FIPOS) technology, then n-channel MOSFETs were successfully fabricated on the wafers. The discrete NMOS/FIPOS transistors with different width/length ratios were subjected to 60 Co γ-ray radiation and their subthreshold-current I d - V g curves were measured as a function of radiation dose. The transistors remain function after 5×10 3 Gy (Si) radiation, but the threshold voltage has significantly shifted to negative and its major contribution comes from the radiation-induced trapped oxide charges. The threshold voltage shift turns back during the room-temperature annealing due to partially detrapping of the trapped holes in the oxide layers. The parasitic back-channel effects of the n-channel MOSFETs/FIPOS are negligible and their hardiness to total dose radiation is similar to that of bulk MOSFETs. FIPOS SOI Total dose radiation NMOSFET References Colinge J P . Silicon-on-insulator technology: materials to VLSI . Kluwer Academic Publisher , 1991 Silicon-on-insulator technology: materials to VLSI Fleetwood D M , Tso S S , Winokur P S . IEEE Trans Nucl Sci , 1988 ; 35 ( 6 ): 1361 IEEE Trans Nucl Sci Imai K . Solid State Electronics , 1981 ; 24 : 159 Solid State Electronics Huang Yi-Ping , Li Ai-Zhen , Zou Si-Xun et al . Study of full isolation SOI technology by highly selective and self-stopping formation of porous oxidized silicon . Journal of Semiconductor(in Chinese) , to be published . Study of full isolation SOI technology by highly selective and self-stopping formation of porous oxidized silicon McWhorter P J , Winokur P S . Appl Phys Lett , 1986 ; 48 ( 2 ): 133 Appl Phys Lett Pennise C A , Jr Boesch H . IEEE Trans Nucl Sci , 1991 ; 38 ( 6 ): 1240 IEEE Trans Nucl Sci Ma T P , Dressendorfer P V . Ionizing radiation effects on MOS devices and circuits . New York : John Wiley and Sons Publisher , 1989 , chapter 3 Ionizing radiation effects on MOS devices and circuits The Project Supported by Doctoral Programme Foundation of High Education 1996-12-03 1997-08-01 2021-02-05 1997 Nuclear Science and Techniques 3 8