Yu-Guang WU; Tong-He ZHANG; Shou-Nan ZHAO; Zhong-Hua ZHU

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Reduction and compensation of lattice stress in high energy P⁺ and P+Sb implanted silicon

更新时间：2021-02-05

- Reduction and compensation of lattice stress in high energy P⁺ and P+Sb implanted silicon 封面论文增强出版
- Reduction and compensation of lattice stress in high energy P⁺ and P+Sb implanted silicon
- 核技术（英文版） 2000年 11卷第2期 (2000)
- 作者机构：
  
  Key Laboratary for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics (Beijing Radiation Center), Beijing Normal University,Beijing,100875;South China University of Technology,Guangzhou,510064
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China
- DOI：中图分类号： O472, O483, TN305.3
- 纸质出版日期：2000-05-01，
  
  网络出版日期：，
  
  收稿日期：99-10-18，
  
  修回日期：，
  
  录用日期：
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Yu-Guang WU, Tong-He ZHANG, Shou-Nan ZHAO, 等. Reduction and compensation of lattice stress in high energy P⁺ and P+Sb implanted silicon[J]. 核技术（英文版）, 2000, 11(2):85-90.

Yu-Guang WU, Tong-He ZHANG, Shou-Nan ZHAO, et al. Reduction and compensation of lattice stress in high energy P⁺ and P+Sb implanted silicon[J]. Nuclear Science and Techniques, 2000, 11(2):85-90.
Yu-Guang WU, Tong-He ZHANG, Shou-Nan ZHAO, 等. Reduction and compensation of lattice stress in high energy P⁺ and P+Sb implanted silicon[J]. 核技术（英文版）, 2000, 11(2):85-90. DOI：

Yu-Guang WU, Tong-He ZHANG, Shou-Nan ZHAO, et al. Reduction and compensation of lattice stress in high energy P⁺ and P+Sb implanted silicon[J]. Nuclear Science and Techniques, 2000, 11(2):85-90. DOI：

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Reduction and compensation of lattice stress in high energy P+ and P+Sb implanted silicon 封面论文 增强出版

Reduction and compensation of lattice stress in high energy P⁺ and P+Sb implanted silicon 封面论文增强出版