Kinetic study of wet oxidation of Si_0.5Ge_0.5 alloy by Rutherford backscattering spectroscopy

Kinetic study of wet oxidation of Si 0.5 Ge 0.5 alloy by Rutherford backscattering spectroscopy 1 2 first-author 2 1 2 2 2 Institute of Semiconductors, Shandong Normal University, Jinan 250014; Institute of Semiconductors, Shandong Normal University, Jinan 250014; Laboratory of Nuclear Analysis Technology, Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800 Laboratory of Nuclear Analysis Technology, Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences, Shanghai 201800 The oxidation of Si 0.5 Ge 0.5 alloy has been investigated at the temperatures of 800°C and 900°C. Rutherford backscattering spectroscopy has been employed to determine the composition and thickness of the oxide layers. Only Si 0.5 Ge 0.5 O 2 layer formed during the oxidation at 800°C, whilst three layers, Si 0.5 Ge 0.5 O 2 , SiO 2 and Ge, are existed after the oxidation at 900°C. Experimental results are interpreted by adding a germanium flux F4 in Deal-Grove oxidation model of Silicon. Si 0.5 Ge 0.5 alloy Wet oxidation Ratherford backscatteing spectroscopy (RBS) References Lyer S S , Patton G L , Stock J M C et al . IEEE Trans Electron Devices , 1989 , ED-36 : 2043 IEEE Trans Electron Devices Cressler J D . IEEE Spectr , 1995 , 32 : 49 IEEE Spectr Nijs J F A . Advanced silicon and semiconducting silicon-alloy based materials and devices . Bristol (England) : IOP , 1994 Advanced silicon and semiconducting silicon-alloy based materials and devices Soref R A . Proc IEEE , 1993 , 81 : 1687 Proc IEEE Zhang J P , Hemment P L F , Kubiak R A et al . In: Proceeding of the MRS 1993 Fall Meeting , 326 : 73 Zhang J P , Hemment P L F , Parker E H C . Semicond Sci Technol , 1999 , 14 : 484 Semicond Sci Technol Kamijoo N K , Woo J C S , Park J S et al . Appl Phys Lett , 1990 , 56 : 66 Appl Phys Lett Rai A K , Porkes S M . J Appl Phys , 1992 , 72 : 4020 J Appl Phys Chu W K , Mayer J W , Nicolet M A . Backscattering spectrometry . New York : Academic Press , 1978 Backscattering spectrometry Deal B E , Grove A S . J Appl Phys , 1965 , 36 : 3770 J Appl Phys TN305.5, O571.33, O485, Supported by the National Natural Sciences Fonndation of China (69776009), the Return Scholars Affair Division in Education Minister, and the Natural Sciences Foundation of Shandong Province (Y96G02101) 1999-12-08 2000-05-01 2021-02-05 2000 Nuclear Science and Techniques 2 11