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Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling

Updated：2021-02-05

- Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.12, Issue 4, (2001)
- Affiliations：
  
  Laboratory of Nuclear Analyses and Techniques, Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences,Shanghai,201800;Electrum,Kista,Sweden,164 40
- Author bio：
- Funds：
- DOI： CLC： O472⁺.91, O571.33, TN305
- Published：01 November 2001，
  
  Published Online：，
  
  Received：01 April 2001，
  
  Revised：，
  
  Accepted：
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Cite this article
Chang-Chun CHEN, De-Zhang ZHU, Shi-Li ZHANG, et al. Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling. [J]. Nuclear Science and Techniques 12(4):295-301(2001)
DOI：

Chang-Chun CHEN, De-Zhang ZHU, Shi-Li ZHANG, et al. Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling. [J]. Nuclear Science and Techniques 12(4):295-301(2001) DOI：

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Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling Cover Article Enhanced Publication