Chang-Chun CHEN; De-Zhang ZHU; Shi-Li ZHANG; Hua-Ming LIU; Jian-Qin CAO; Zhi-Bin ZHANG; Hao-Chang PAN; Yong-Qi WANG

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Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling

更新时间：2021-02-05

- Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling 封面论文增强出版
- Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling
- 核技术（英文版） 2001年 12卷第4期 (2001)
- 作者机构：
  
  Laboratory of Nuclear Analyses and Techniques, Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences,Shanghai,201800;Electrum,Kista,Sweden,164 40
- 作者简介：
- 基金信息：
  
  National Natural Sciences Foundation of China
- DOI：中图分类号： O472⁺.91, O571.33, TN305
- 纸质出版日期：2001-11-01，
  
  网络出版日期：，
  
  收稿日期：2001-04-01，
  
  修回日期：，
  
  录用日期：
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Chang-Chun CHEN, De-Zhang ZHU, Shi-Li ZHANG, 等. Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling[J]. 核技术（英文版）, 2001, 12(4):295-301.

Chang-Chun CHEN, De-Zhang ZHU, Shi-Li ZHANG, et al. Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling[J]. Nuclear Science and Techniques, 2001, 12(4):295-301.
Chang-Chun CHEN, De-Zhang ZHU, Shi-Li ZHANG, 等. Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling[J]. 核技术（英文版）, 2001, 12(4):295-301. DOI：

Chang-Chun CHEN, De-Zhang ZHU, Shi-Li ZHANG, et al. Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling[J]. Nuclear Science and Techniques, 2001, 12(4):295-301. DOI：

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Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling 封面论文 增强出版

Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/Channeling 封面论文增强出版