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Strain in GaN/Si<111> by RBS/Channeling

Updated：2021-02-05

- Strain in GaN/Si<111> by RBS/Channeling Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.13, Issue 1, (2002)
- Affiliations：
  
  Laboratory of Nuclear Analyses and Techniques, Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences,Shanghai,201800;Department of Technical Physics, Peking University,Beijing,100871
- Author bio：
- Funds：
- DOI： CLC： O472⁺.91, O571.33, TN305
- Published：01 February 2002，
  
  Published Online：，
  
  Received：21 November 2001，
  
  Revised：，
  
  Accepted：
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Cite this article
Chang-Chun CHEN, Jian-Qing CAO, Ming-Fang WU, et al. Strain in GaN/Si<111> by RBS/Channeling. [J]. Nuclear Science and Techniques 13(1):37-41(2002)
DOI：

Chang-Chun CHEN, Jian-Qing CAO, Ming-Fang WU, et al. Strain in GaN/Si<111> by RBS/Channeling. [J]. Nuclear Science and Techniques 13(1):37-41(2002) DOI：

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Strain in GaN/Si<111> by RBS/Channeling Cover Article Enhanced Publication