AFM study of combinatorial Ga⁺ implanted Co₇Ag₉₃ film and its Kerr effect

AFM study of combinatorial Ga + implanted Co 7 Ag 93 film and its Kerr effect 1 first-author 1 1 1 2 2 2 3 3 3 3 School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai 200030 School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai 200030 Nuclear Analysis Laboratory, Shanghai Institute of Nuclear Research, Shanghai 201800 Nuclear Analysis Laboratory, Shanghai Institute of Nuclear Research, Shanghai 201800 Optical Science and Engineering Department, Fudan University, Shanghai 200433 Optical Science and Engineering Department, Fudan University, Shanghai 200433 In this paper, a magnetooptic chip was prepared on Si wafer by combinatorial Ga + implantation into ion sputtered Co 7 Ag 93 film. The surface morphology of each unit of the chip was detected by AFM, while their Kerr effect was measmed by MOKE equipment. It is observed that the maximum Kerr rotation (MKR) occurs when the incident photon energy is around 3.8-3.9 eV. Summarization of MKR versus implanted Ga + dose shows that the MKR enhancement by Ga+ implantation can be characterized as incubation, enhancement and saturation regions. Considering the mutual solubility and surface morphology transition after annealing, it is suggested that Ga + tends to form CoGa and/or CoGa 3 intermetallic compounds. Before the formation of CoGa 3 compounds, no apparent MKR enhancement could be observed. While when the surface is half occupied by forest-like CoGa 3 compounds. MKR enhancement will be saturated. By comparison of the maximum Kerr rotation with the cone areal density, it can be induced that not only the bulk concentration and structure, but also the surface morphology plays an important role in magnetooptic Kerr effect. Combinatorial ion implantation AFM MOKE Surface morphology References Stearns M B , Cheng Y. J Appl Phys , 1994 , 75 : 6894 J Appl Phys Hanson M , Johansson C , Mφrup S. J Phys Condens Matter , 1993 , 5 : 725 J Phys Condens Matter Chen J P , Sorensen C M , Klabunde K J. Phys Rev , 1995 , B51 : 11527 Phys Rev Hou M , Azzaoui M E , Pattyn H et al . Phys Rev , 2000 , B62 : 5117 Phys Rev Jia H , Veldeman J , Burgelman M. J Magn Magn Mater , 2001 , 223 : 73 J Magn Magn Mater Tessier G , Beauvillain P. Appl Surf Sci , 2000 , 164 : 175 Appl Surf Sci Du J H , Liu W J , Li Q et al . J Magn Magn Mater , 1999 , 191 : 17 J Magn Magn Mater Kemner K , Harris V , Chakarian V. J Appl Phys , 1996 , 79 : 5345 J Appl Phys O'Grady K , Laidle H. J Magn Magn Mater , 1999 , 200 : 616 J Magn Magn Mater Qiu Z Q , Bader S D. J Magn Magn Mater , 1999 , 200 : 664 J Magn Magn Mater Xiang X D , Sun X , Briceño G et al . Science , 1995 , 268 : 1738 Science ASM Handbook, Vol.3. Alloy phase Diagrams . Ohio : ASM, Materials Park , C1991 ASM Handbook, Vol.3. Alloy phase Diagrams Wang S Y , Shen Z C , Zheng W M et al . Physica , 2000 , B279 : 109 Physica Zheng W M , Wang S Y , Qian D L et al . J Magn Magn Mater , 1999 , 198-199 : 210 J Magn Magn Mater Shen Y R. The principles of nonlinear optics , New York : Wiley , 1984 The principles of nonlinear optics O482.55, O484.4, O572.21 Supported by National Natural Science Foundation of China (No. 19975067 and No.10075074) 2001-12-10 2002-08-01 2021-02-05 2002 Nuclear Science and Techniques 3 13