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Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode

NUCLEAR CHEMISTRY, RADIO CHEMISTRY, NUCLEAR MEDICINE | Updated：2021-02-07

- Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.29, Issue 10, (2018)
- Affiliations：
  
  Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University,Lanzhou,China,730000;China Academy of Electronic and Information Technology,Beijing,China,100041
- Author bio：
- Funds：
- DOI：10.1007/s41365-018-0480-3 CLC：
- Published：01 October 2018，
  
  Published Online：28 August 2018，
  
  Received：27 February 2018，
  
  Revised：29 April 2018，
  
  Accepted：02 May 2018
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Cite this article
Gui-Peng Liu, Xin Wang, Meng-Nan Li, et al. Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode. [J]. Nuclear Science and Techniques 29(10):139(2018)
DOI：

Gui-Peng Liu, Xin Wang, Meng-Nan Li, et al. Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode. [J]. Nuclear Science and Techniques 29(10):139(2018) DOI： 10.1007/s41365-018-0480-3.

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Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode Cover Article Enhanced Publication