DEPTH PROFILING OF 1H AND/OR 4He IN SOLIDS BY ERD WITH 19F IONS
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DEPTH PROFILING OF 1H AND/OR 4He IN SOLIDS BY ERD WITH 19F IONS
DEPTH PROFILING OF 1H AND/OR 4He IN SOLIDS BY ERD WITH 19F IONS
核技术(英文版)1990年1卷第1-2期
Affiliations:
1.Institute of Physics, Academia Sinica, Beijing 100080, China
2.Central Institute of Nationality, Beijing 100081, China
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朱沛然, 刘家瑞, 任孟眉, 等. DEPTH PROFILING OF 1H AND/OR 4He IN SOLIDS BY ERD WITH 19F IONS[J]. 核技术(英文版), 1990,1(1-2):65-69.
Peiran Zhu, Jiarui Liu, Mengmei Ren, et al. DEPTH PROFILING OF 1H AND/OR 4He IN SOLIDS BY ERD WITH 19F IONS[J]. Nuclear Science and Techniques, 1990,1(1-2):65-69.
朱沛然, 刘家瑞, 任孟眉, 等. DEPTH PROFILING OF 1H AND/OR 4He IN SOLIDS BY ERD WITH 19F IONS[J]. 核技术(英文版), 1990,1(1-2):65-69.DOI:
Peiran Zhu, Jiarui Liu, Mengmei Ren, et al. DEPTH PROFILING OF 1H AND/OR 4He IN SOLIDS BY ERD WITH 19F IONS[J]. Nuclear Science and Techniques, 1990,1(1-2):65-69.DOI:
DEPTH PROFILING OF 1H AND/OR 4He IN SOLIDS BY ERD WITH 19F IONS
1,H or ,4,He depth profiling in ,1,H or ,4,He implanted silicon samples was performed by elastic recoil detection (ERD) with multicharged ,19,F ions at a small accelerator. Optimization of the experimental parameters such as incident ions energy and scattering geometry were calculated by computer simulation. Depth resolution of about 20-30nm at depth of 400nm for,1,H and at depth of 300nm for ,4,He can be obtained, respectively.
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Keywords
Elastic recoil detectionDepth profiling
references
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