Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs

Shuai Gao; Jin-Hu Yang; Bing Ye; Chang Cai; Ze He; Jie Liu; Tian-Qi Liu; Xiao-Yu Yan; You-Mei Sun; Guo-Qing Xiao

doi:10.1007/s41365-022-01099-7

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Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2022-10-24

- Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs
- Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs
- 核技术（英文版） 2022年33卷第9期文章编号：112
- Affiliations：
  
  1.Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000, China
  2.University of Chinese Academy of Sciences, Beijing 100049, China
  3.State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203, China
  4.State Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Macao 999078, China
- Author bio：
  
  yebing@impcas.ac.cn (Bing Ye)
  j.liu@impcas.ac.cn (Jie Liu),
- Funds：
  
  National Natural Science Foundation of China(12035019;12105339)
- DOI：10.1007/s41365-022-01099-7
  中图分类号：
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Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs[J]. 核技术（英文版）, 2022,33(9):112

Shuai Gao, Jin-Hu Yang, Bing Ye, et al. Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs[J]. Nuclear Science and Techniques, 2022,33(9):112
Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs[J]. 核技术（英文版）, 2022,33(9):112 DOI： 10.1007/s41365-022-01099-7.

Shuai Gao, Jin-Hu Yang, Bing Ye, et al. Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs[J]. Nuclear Science and Techniques, 2022,33(9):112 DOI： 10.1007/s41365-022-01099-7.

摘要

Abstract

Multiple-bit upsets (MBUs) have become a threat to modern advanced field-programmable gate arrays (FPGAs) applications in radiation environments. Hence, many investigations have been conducted using medium-energy heavy ions to study the effects of MBU radiation. However, high-energy heavy ions (HEHIs) greatly affect the size and percentage of MBUs because their ionization track structures differ from those of medium-energy heavy ions. In this study, the different impacts of high-energy and medium-energy heavy ions on MBUs in 28 nm FPGAs as well as their mechanisms are thoroughly investigated. With the Geant4 calculation, more serious energy effects of HEHIs on MBU scales were successfully demonstrated. In addition, we identified worse MBU responses resulting from lowered voltages. The MBU orientation effect was observed in the radiation of different dimensions. The broadened ionization tracks for tilted tests in different dimensions could result in different MBU sizes. The results also revealed that the ionization tracks of tilted HEHIs have more severe impacts on the MBU scales than medium-energy heavy ions with much higher linear energy transfer. Therefore, comprehensive radiation with HEHIs is indispensable for effective hardened designs to apply high-density 28 nm FPGAs in deep space exploration.

关键词

Keywords

FPGAHigh-energy heavy ion radiationMBUIonization track

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