Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test

Jie Wang; Da-Qing Gao; Wan-Zeng Shen; Hong-Bin Yan

doi:10.1007/s41365-022-01118-7

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Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2022-11-22

- Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test
- Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test
- 核技术（英文版） 2022年33卷第10期文章编号：133
- Affiliations：
  
  1.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
  2.School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  3.School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China
- Author bio：
  
  shwzeng@impcas.ac.cn
- Funds：
  
  National Key Research and Development Program of China(2019YFA0405402)
- DOI：10.1007/s41365-022-01118-7
  中图分类号：
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Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test[J]. 核技术（英文版）, 2022,33(10):133

Jie Wang, Da-Qing Gao, Wan-Zeng Shen, et al. Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test[J]. Nuclear Science and Techniques, 2022,33(10):133
Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test[J]. 核技术（英文版）, 2022,33(10):133 DOI： 10.1007/s41365-022-01118-7.

Jie Wang, Da-Qing Gao, Wan-Zeng Shen, et al. Lifetime estimation of IGBT module using square-wave loss discretization and power cycling test[J]. Nuclear Science and Techniques, 2022,33(10):133 DOI： 10.1007/s41365-022-01118-7.

摘要

Abstract

The insulated gate bipolar transistor (IGBT) module is one of the most age-affected components in the switch power supply, and its reliability prediction is conducive to timely troubleshooting and reduction in safety risks and unnecessary costs. The pulsed current pattern of the accelerator power supply is different from other converter applications; therefore, this study proposed a lifetime estimation method for IGBT modules in pulsed power supplies for accelerator magnets. The proposed methodology was based on junction temperature calculations using square-wave loss discretization and thermal modeling. Comparison results showed that the junction temperature error between the simulation and IR measurements was less than 3%. An AC power cycling test under real pulsed power supply applications was performed via offline wear-out monitoring of the tested power IGBT module. After combining the IGBT4 PC curve and fitting the test results, a simple corrected lifetime model was developed to quantitatively evaluate the lifetime of the IGBT module, which can be employed for the accelerator pulsed power supply in engineering. This method can be applied to other IGBT modules and pulsed power supplies.

关键词

Keywords

IGBT moduleJunction temperaturePower cycling testLifetime predictionPower loss discretization

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