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Ionizing radiation effect on 10-bit bipolar A/D converter

LOW ENERGY ACCELERATORS AND RADIATION APPLICATIONS

Ionizing radiation effect on 10-bit bipolar A/D converter

CHEN Rui
LU Wu
REN Diyuan
ZHENG Yuzhan
WANG Yiyuan
FEI Wuxiong
LI Maoshun
LAN Bo
CUI Jiangwei
Nuclear Science and TechniquesVol.21, No.3pp.152-156Published in print 20 Jun 2010
53900

In this article, radiation effects and annealing characteristics of a bipolar analog-to-digital converter (ADC) are investigated in different biases and dose rates. The results show that ADC is sensitive to both the bias and dose rate. Under high-dose-rate irradiation, the ADC functions well, while under low-dose-rate irradiation, the parameters of ADC change obviously at low dose level, and the damage is significant at zero bias. Combining the fringing field with the space charge model, the underlying mechanism for this response is discussed.

Bipolar Analog to Digital converters60Co γRadiationELDRSBias condition
References
[1] Lee C I, Johnston A H. IEEE Trans Nucl Sci, 1998, 45(3): 1444-1449
[2] Lee CI, Rax B G, Johnston A H. IEEE Radiation Effects Data Workshop,1993:112-117
[3] Lee C I, Rax B G, Johnston A H. IEEE Trans Nucl Sci, 1994, 41: 2459-2466
[4] Guo Qi, Ren Diyuan, Fan Long, et al. Nucl Tech, 1997, 20(1): 753-756. (in Chinese)
[5] Lee C I, Rax B C, Johnston AH. IEEE Trans. on Nucl. Sci, 1995, 42(6): 1681-1688
[6] Witczak S C, Schrimpf R D, Galloway K F, et al. IEEE Trans Nucl Sci, 1996, 43(6):3151-3160.
[7] Lu W, Ren D, Zheng Y, et al. J Semiconduc, 2008, 29(7): 1286-1291.
[8] Wang Y, Lu W, Ren D, et al. Atom Energy Sci Tech, 2009, 43(10): 951-955. (in Chinese)
[9] Zhang H, Lu W, Ren D, et al. Microelectronics, 2008, 34(6): 606-608.(in Chinese)
[10] Nowlin R N, Enlow E W, Schrimpf R D, et al. IEEE Trans Nucl Sci, 1992, 39(6):2026-2035.
[11] Schmidt D M, Wu A, Schrimpf R D, et al. IEEE Trans Nucl Sci, 1996, 43(6):3032-3039.
[12] Pershenkov V S, Maslov V B, Cherepko S V, et al. IEEE Trans Nucl Sci, 1997, 44(6):1840-1848.
[13] Lu W, Ren D, Guo Q, et al. J Semiconduc, 1998, 19(5): 374-380. (in Chinese)