Effect of hydrogen on SiC-C films with AES and XPS analyses

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS

Effect of hydrogen on SiC-C films with AES and XPS analyses

HUANG Ning-Kang，

YANG Bin，

XIONG Qi，

LIU Yao-Guang

Nuclear Science and Techniques

Vol.14, No.1

pp.56-59

Published in print 01 Feb 2003

CLC：TQ163,O484.5

19700

SiC-C films with different content of SiC were deposited with r. f. magnetron sputtering followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of 3.23×10⁷ Pa for 3h at 500K. AES and XPS were used to analyze chemical bonding states of C and Si in the SiC-C films as well as contaminating oxygen before and after hydrogen gas permeation in order to study the effect of hydrogen on them. Related mechanism was discussed in this paper.

SiC-C filmsHydrogen permeationXPSAES

References

[1]

Kusunoki I, Igari Y. Appl Surf Sci, 1992, 59: 95

[2]

Jonea R H, Henager C H, Hollenberg W J. J Nucl Mater, 1992, 191/194: 75

[3]

Miotello A, Kelly R, Laidani N. Surf Coatings Technol, 1994, 65: 45

[4]

Stangeby P C, Auciello O, Haasz A A. J Vac Sci Techn, 1983, A1: 1425

[5]

Jørgensen B, Morgen P. J Vac Sci Technol, 1986, A4: 1701

[6]

Huang N K, Xiong Q, Yang B et al. presented to J Nucl Mater

[7]

Mizokawa Y, Geib K M, Wilmsen C W. J Vac Sci Technol, 1986, A4(3): 1696

[8]

Kusunoki I, Igari Y. Appl Surf Sci, 1992, 59: 95

[9]

Besling W F A, Goossens A, Meester B et al. J Appl Phys, 1998, 83: 544

[10]

Kusunoki I, Igari Y. Appl Surf Sci, 1992, 243: 95

[11]

Huang N K. Accepted by J of Mater Sci letters

[12]

Lutz H, Bruns M, Link F et al. Thin Solid Films, 1998, 332: 230