Atomic mobility in energetic cluster deposition

NUCLEAR, HEAVY ION AND ATOMIC PHYSICS

Atomic mobility in energetic cluster deposition

PAN Zheng-Ying ，

WANG Yue-Xia，

WEI Qi，

LI Zhi-Jie，

ZHOU Liang，

ZHANG Liang-Kun

Nuclear Science and Techniques

Vol.15, No.6

pp.321-327

Published in print 01 Dec 2004

CLC：O484,O485,O562.5

24001

This paper tries to outline the influence of atomic mobility on the initial fabrication of thin films formed by LECBD. Based on our recent studies on low-energy cluster beam deposition (LECBD) by molecular dynamics simulation, two examples, the deposition of small carbon clusters on Si and diamond surfaces and Al clusters on Ni substrate, were mainly discussed. The impact energy of the cluster ranges from 0.1 eV to 100 eV. In the former case, the mobility and the lateral migration of surface atoms, especially the recoil atoms, are enhanced with increasing the impact energy, which promote the film to be smoother and denser. For the latter case, the transverse kinetic energy of cluster atoms, caused mainly by the collision between moving cluster atoms, dominates the lateral spread of cluster atoms on the surface, which is contributive to layer-by-layer growth of thin films. Our result is consistent with the experimental observations that the film structure is strongly dependent on the impact energy. In addition, it elucidates that the atomic mobility takes a leading role in the structure characteristic of films formed by LECBD.

Atomic mobilityEnergetic clusterThin film growthMolecular dynamics simulation

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