Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS

Research on total-dose irradiation effect of hardened partially-depleted NMOSFET/SIMOX

QIAN Cong，

ZHANG En-Xia，

ZHANG Zheng-Xuan，

ZHANG Feng，

LIN Cheng-Lu，

WANG Ying-Min，

WANG Xiao-He，

ZHAO Gui-Ru，

EN Yun-Fei，

LUO Hong-Wei，

SHI Qian

Nuclear Science and Techniques

Vol.16, No.5

pp.260-265

Published in print 01 Oct 2005

CLC：TN386.1

32400

In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.

Silicon on insulatorIon implantationTotal-dose irradiation effectEnclosed gateThreshold voltage shiftLeakage current

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