Overview of SOI materials technology in China

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS

Overview of SOI materials technology in China

CHEN Meng，

WANG Xi，

LIN Cheng-Lu

Nuclear Science and Techniques

Vol.16, No.6

pp.330-334

Published in print 01 Dec 2005

CLC：TN405,TN305.3

33001

In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI (SGOI) material, an ideal substrate for realizing strained-silicon structures, has been investigated by modified SIMOX technology. From 2002, the 100 mm, 125 mm and 150 mm SIMOX wafers have been successfully produced by Shanghai Simgui Technology Co. Ltd, a commercial spin-off of Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), and shipped to the semiconductor industry worldwide. This paper presents an outlook for R & D on SOI technologies, and the recent status and future prospect of SIMOX wafers in China.

Silicon-on-insulator(SOI)Ion implantationSeparation by implanted oxygen (SIMOX)

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