Impulse-coupling coefficients from a pulsed-laser ablation of semiconductor GaAs

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS

Impulse-coupling coefficients from a pulsed-laser ablation of semiconductor GaAs

LIU Ai-Hua

Nuclear Science and Techniques

Vol.17, No.4

pp.217-221

Published in print 20 Aug 2006

DOI：10.1016/S1001-8042(06)60040-7

CLC：TN241,TN304.2+3

42001

Impulse-coupling coefficients from 1.06-μm, 10-ns Nd:YAG pulsed-laser radiation to GaAs targets with different areas were measured using the ballistic pendulum method in the laser power density ranging from 4.0×10⁸ to 5.0×10⁹W·cm^-2. A detonation wave model of the plasma was established theoretically. The expansion process of plasma after the laser pulse ends is described in detail, and the impulse-coupling coefficients from pulsed laser with different energies to GaAs with different areas were calculated using the given model. It is found that the theoretical results agree well with the experimental data.

Laser-material interactionLaser-supported detonationImpulse couplingGaAs

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