Positron annihilation study of defects in GaAs irradiated by fission neutron

Zhu Sheng-Yun，

Li An-Li，

Luo Qi，

Fan Zhi-Guo，

Zheng Sheng-Nan，

Gou Zhen-Hui，

Qian Jia-Yu

Nuclear Science and Techniques

Vol.8, No.1

pp.30-32

Published in print 01 Feb 1997

29800

The defects in Si-doped, N-type HB GaAs single crystal irradiated by E_n ≥1 MeV fission neutrons (6.5×10¹⁵cm^-2 and 1.4×10¹⁴cm^-2) have been investigated using positron annihilation lifetime technique. The mono- and di-vacancies were created by irradiation and the tri-vacancies were formed during annealing. The concentration of defects is proportional to the irradiating neutron fluence. Three annealing stages were observed at 250, 450 and 650℃ for the mono-, di- and tri-vacancies, respectively.

GaAsEn ≥1 MeV fission neutron irradiationDefects and defect annealingPositron annihilation.

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