XAFS applications in semiconductors

SYNCHROTRON TECHNOLOGY AND APPLICATIONS

XAFS applications in semiconductors

WEI Shi-Qiang，

SUN Zhi-Hu，

PAN Zhi-Yun，

ZHANG Xin-Yi，

YAN Wen-Sheng，

ZHONG Wen-Jie

Nuclear Science and Techniques

Vol.17, No.6

pp.370-388

Published in print 20 Dec 2006

DOI：10.1016/S1001-8042(07)60006-2

CLC：O722+.8,O472

35603

X-ray absorption fine structure (XAFS) has experienced a rapid development in the last three decades and has proven to be a powerful structural characterization technique nowadays. In this review, the XAFS basic principles including the theory, the data analysis, and the experiments have been introduced in detail. To show its strength as a local structure probe, the XAFS applications in semiconductors are summarized comprehensively, that is, thin films, quantum wells and dots, dilute magnetic semiconductors, and so on. In addition, certain new XAFS-related techniques, such as in-situ XAFS, micro-XAFS, and time-resolved XAFS are also shown.

X-ray absorption fine structure (XAFS)Local structuresSemiconductor quantum systemSynchrotron radiation

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