[1] Lee C I, Johnston A H . IEEE Trans Nucl Sci, 1998, 45(3): 1444-1449
[2] Lee CI, Rax B G, Johnston A H . IEEE Radiation Effects Data Workshop,1993:112-117
[3] Lee C I, Rax B G, Johnston A H . IEEE Trans Nucl Sci, 1994, 41: 2459-2466
[4] Guo Qi, Ren Diyuan, Fan Long, et al . Nucl Tech, 1997, 20(1): 753-756. (in Chinese)
[5] Lee C I, Rax B C, Johnston AH . IEEE Trans. on Nucl. Sci, 1995, 42(6): 1681-1688
[6] Witczak S C, Schrimpf R D, Galloway K F, et al . IEEE Trans Nucl Sci, 1996, 43(6):3151-3160.
[7] Lu W, Ren D, Zheng Y, et al . J Semiconduc, 2008, 29(7): 1286-1291.
[8] Wang Y, Lu W, Ren D, et al . Atom Energy Sci Tech, 2009, 43(10): 951-955. (in Chinese)
[9] Zhang H, Lu W, Ren D, et al . Microelectronics, 2008, 34(6): 606-608.(in Chinese)
[10] Nowlin R N, Enlow E W, Schrimpf R D, et al . IEEE Trans Nucl Sci, 1992, 39(6):2026-2035.
[11] Schmidt D M, Wu A, Schrimpf R D, et al . IEEE Trans Nucl Sci, 1996, 43(6):3032-3039.
[12] Pershenkov V S, Maslov V B, Cherepko S V, et al . IEEE Trans Nucl Sci, 1997, 44(6):1840-1848.
[13] Lu W, Ren D, Guo Q, et al . J Semiconduc, 1998, 19(5): 374-380. (in Chinese)