Coexistance of C40 and C54 TiSi2 during the solid state reaction of Ti/Mo/Si system

Coexistance of C40 and C54 TiSi₂ during the solid state reaction of Ti/Mo/Si system

ZHANG Zhi-Bin，

ZHANG Shi-Li，

ZHU De-Zhang，

XU Hong-Jie

Nuclear Science and Techniques

Vol.13, No.1

pp.19-24

Published in print 01 Feb 2002

CLC：TN304.1+2, TN304.2+6, TN305.3, O472+.1

27500

The effect of a 0.9 nm Mo interlayer at the interface of Ti film deposited on a Si substrate on phase formation of TiSi₂ during annealing has been studied by using transmission electron micro-diffraction technique. When Ti/Mo/Si was annealed at low temperature as 550℃ for 30 min in Ar ambient, a metastable phase, i.e., hexagonal C40 TiSi₂, and the equilibrium phase, i.e., orthorhombic C54 TiSi₂, were both detected. The experimental patterns of the C40 and C54 compare well with the simulated ones.

Transmission electron micro-diffractionPhase of TiSi2C54C40

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Standard JCPDS diffraction patterns 6-607 (hexagonal (Ti0.4Mo0.6)Si₂) and 7-331 (hexag-onal (Ti0.8Mo0.2)Si₂), JCPDS-International Center for Diffraction Data, PDF-2 Database, 12 Campus Boulevard, Newton Square, PA 19073-3273, USA

Standard JCPDS diffraction pattern 35-785 (orthorhombic TiSi₂), JCPDS-International Center for Diffraction Data, PDF-2 Database. 12 Campus Boulevard, Newton Square, PA 19073-3273. USA