Long range implantation by MEVVA metal ion source

ZHANG Tong-He，

WU Yu-Guang，

MA Fu-Rong，

LIANG Hong

Nuclear Science and Techniques

Vol.12, No.1

pp.16-20

Published in print 01 Feb 2001

CLC：O472, O483, TN305.3

25000

Metal vapor vacuum are (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation. It is very important for research and application of the ion beam modification of materials. The results show that the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux and high dose. The implanted depth is 3~11.6 times greater than that of the corresponding ion range. The ion species, doses and ion fluxes play an important part in the long-range implantation. Especially, thermal atom chemistry have specific effect on the long-range implantation during high ion flux implantation at transient high target temperature.

MEVVA ion sourceLong-range ion implantationDiffusion coefficientHigh ionflux

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