Photoluminescence from neodymium silicide thin films formed by MEVVA ion source

XIAO Zhi-Song，

XU Fei，

CHENG Guo-An，

ZHANG Tong-He，

YI Zhong-Zhen，

WANG Shui-Feng

Nuclear Science and Techniques

Vol.12, No.1

pp.21-25

Published in print 01 Feb 2001

CLC：O484.4+1, TN305.3.TN304.3

23300

Neodymium silicides were synthesized by Nd ion implanted into Si substrates with the aid of a metal vapor vacuum arc (MEVVA) ion source. The blender of Nd₅Si₄ and NdSi₂ was formed in a neodymium-implanted silicon thin film during the as-implanted state, but there was only single neodymium silicide compound in the post-annealed state, and the phase changed from NdSi₂ to Nd₅Si₄ with increasing annealing temperature. The blue-violet luminescence excited by ultra-violet was observed at the room temperature (RT), and the intensity of photoluminescence (PL) increased with increasing the neodymium ion fluence. Moreover, the photoluminescence was closely dependent on the temperature of rapid thermal annealing (RTA). A mechanism of photoluminescence was discussed.

PhotoluminescenceNeodymium silicideIon implantationMEVVA ion sourceRapid thermal annealing (RTA)

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