Kinetic study of wet oxidation of Si0.5Ge0.5 alloy by Rutherford backscattering spectroscopy

Kinetic study of wet oxidation of Si_0.5Ge_0.5 alloy by Rutherford backscattering spectroscopy

ZHANG Jing-Ping，

CHEN Chang-Chun，

LIU Jing-Hua，

ZHU De-Zhang，

XIE Dong-Zhu，

PAN Hao-Chang

Nuclear Science and Techniques

Vol.11, No.2

pp.114-118

Published in print 01 May 2000

CLC：TN305.5, O571.33, O485,

19300

The oxidation of Si_0.5Ge_0.5 alloy has been investigated at the temperatures of 800°C and 900°C. Rutherford backscattering spectroscopy has been employed to determine the composition and thickness of the oxide layers. Only Si_0.5Ge_0.5O₂ layer formed during the oxidation at 800°C, whilst three layers, Si_0.5Ge_0.5O₂, SiO₂ and Ge, are existed after the oxidation at 900°C. Experimental results are interpreted by adding a germanium flux F4 in Deal-Grove oxidation model of Silicon.

Si0.5Ge0.5 alloyWet oxidationRatherford backscatteing spectroscopy (RBS)

References

Lyer S S, Patton G L, Stock J M C et al. IEEE Trans Electron Devices, 1989, ED-36: 2043

Cressler J D. IEEE Spectr, 1995, 32: 49

Nijs J F A. Advanced silicon and semiconducting silicon-alloy based materials and devices. Bristol (England): IOP, 1994

Soref R A. Proc IEEE, 1993, 81: 1687

Zhang J P, Hemment P L F, Kubiak R A et al. In: Proceeding of the MRS 1993 Fall Meeting, 326: 73

Zhang J P, Hemment P L F, Parker E H C. Semicond Sci Technol, 1999, 14: 484

Kamijoo N K, Woo J C S, Park J S et al. Appl Phys Lett, 1990, 56: 66

Rai A K, Porkes S M. J Appl Phys, 1992, 72: 4020

Chu W K, Mayer J W, Nicolet M A. Backscattering spectrometry. New York: Academic Press, 1978

Deal B E, Grove A S. J Appl Phys, 1965, 36: 3770