The Shang Dynasty civilization in China is based on the development of the bronze techniques. A large amount of Shang Dynasty bronzes, excavated from Jiangxi, Hubei and Henan Provinces, have become a focus of world attention. However, the Shang Dynasty center was located at Zhenzhou and Anyang city areas, Henan Province, where no large copper ores have been found so far. Therefore, where did the huge ore material for casting the bronzes come from? It is an unsettled question paid attention by the archaeologists and scientists. 35 Shang Dynasty bronzes and 21 copper and lead ore materials aged in the Shang-Zhou Dynasty, the Spring-Autumn Period and the modern time, have been measured by the use of mass spectrometry. Based upon lead isotopic ratios, the ore material for casting the bronzes with the middle isotopic ratios of 207Pb/206Pb ranged in 0.8~0.9 could come from the ancient copper mine of Tongling, Jiangxi Province and Tong Lushan, Hubei Province and that with the high isotopic ratios (>0.9) could be from the northern part of the Shang Empire, called "Gongfang" in the historical records, e.g. today's Hebei and Liaoning Provinces. The others with the low isotopic ratios (< 0.8) might originate from polymetalic deposits, with the high isotopic ratios of 238U/204Pb in the ore flux or in the magma.
Vol.11, No.2
Select issueYearIssue
681
Research article 01 May 2000
PENG Zi-Cheng,ZHANG Zhao-Feng,HE Jian-Feng,WANG Zhao-Rong,LIU Shi-Zhong,HUA Jue-Ming
keyword:Keywords Shang Dynasty bronzes;Copper and lead ore material;Lead isotopic ratios;
Research article 01 May 2000
WU Ming-Hong,BAO Bo-Rong,Fumio YOSHII,Keizo MAKUUCHI
A series of polyvinyl alcohol (PVA) and polyvinyl pyrrolidone (PVP) blended hydrogel with kappa-carrageenan (KC) were prepared by radiation crosslinking with electron beam to improve the properties of hydrogel as wound dressing. The properties of the blended hydrogels were evaluated in terms of gel fraction, swelling behavior, gel strength and water evaporation from hydrogel. Gel fraction of PVA/PVP was saturated at 50 kGy and the achieved gel fraction was 70%~80%. However, obtained hydrogel was very fragile and produced many bubbles at a dose of 50 kGy and above, hence 1%~5% KC were added to give toughness. The rate of gel formation and the toughness of the blended hydrogel were raised after mixing KC. The PVA/PVP/KC blended hydrogel irradiated showed satisfactory properties for wound dressing, it did not produce bubble during irradiation, and it could retard the water evaporation.
keyword:Hydrogel;Polyvinyl alcohol;Polyvinyl pyrrolidone;Kappa-carrageenan;Irradiation crosslinking;
Research article 01 May 2000
LIU Wei-Guo,PENG Zi-Cheng,XIAO Yin-Kai,ZHANG Zhao-Feng,WANG Zhao-Rong
The isobaric interference for boron isotopic measurement by negative thermal ionization mass spectrometry (NTIMS) has been studied. The result shows that the CNO- is not only from the organic material, but also from nitrate in loading reagent in NTIMS. Monitoring the mass 43 ion intensity and 43/42 ratio of blank are also necessary for the boron isotopic measurement by NTIMS, other than is only boron content.
keyword:Mass spectrometry;Boron isotopic measurement;
Research article 01 May 2000
WU Yu-Guang,ZHANG Tong-He,ZHAO Shou-Nan,ZHU Zhong-Hua
The relations of variation of lattice stress to shape, peak concentrations of the P atom depth profile and Sb doses of P+Sb dual implantation were studied in high energy P implantation silicon. The experimental results show that the lattice stress in P-implanted silicon obviously increases with increasing ion dose. The stress of P-implanted silicon with the dose of 2×1013/cm2 is 2.2 times greater than at a dose of 3.6×1012/cm2. The stress decreases rapidly as the annealing time increases. It is very interesting that the stress has a negative value when the concentration of P atoms in the implanted layer is below 6×1016/cm3, whereas the stress becomes positive when the concentration is greater than 6×1016/cm3. The stress increases rapidly with increasing Sb ion dose after P implantation. The stress has a positive value before annealing. If the Sb dose is below 1×1016/cm2, the stress is negative after annealing, and it is positive when the Sb dose is higher than 1×1016/cm2. The stress is close to zero for a Sb implantation dose of 1×1016/cm2. The best compensation dose of Sb to P implantation dose of 3×1016/cm2 is 1×1016/cm2.
keyword:Silicon lattice stress;P+ and P+Sb implantation;Rapid thermal annealing;Reduction and compensation;
Research article 01 May 2000
CHEN Yi-Long,YI Fan,ZHANG Fu-Liang
If recoilless fraction fa is available, the optimum absorber thickness dopt can be calculated by maximizing the signal to noise ratio or Q factor. In this work, an approach presented is to get experimental Qexp as a function of the thickness, and then fitting Qexp by its theoretical expression gives fa value. At last the dopt value is deduced from a maximum on the fitted curve. In such a way, thicknesses of six specimens with quadrupole or magnetic hyperfine splitting were optimized.
keyword:Mössbauer spectrum;Optimum thickness;Signal to noise ratio;
Research article 01 May 2000
HUANG Ning-Kang,CHENG Bei-Bei
The behavior of the radiation damage of sapphire crystal, produced by implantation with 380 keV Nb+ ion followed by annealing in a series of steps from 500 to 1100°C at reducing atmosphere, was investigated in optical absorption and XPS measurements. It is found that the implanted niobium in sapphire is in different local environments with different chemical states after the annealing. The changes in optical density (OD) from the bands, based on the well known F-type centers, show that the annealing behavior of the radiation damage may be divided into different stages due to different mechanisms.
keyword:Radiation damage;Implantation;Sapphire crystal;
Research article 01 May 2000
HOU Bi-Hui,LI Zhi-Wei,YAO Kun,CAI Zhang-Shun,GE Yu-Xiang,Chen Yu-Tao
The electron spin resonance, transmission and reflection spectra showed that a steadily electron-type paramagnetic complex color point defect Fn center is produced by 60Co γ-ray strong dose irradiation in a single crystal LiF. The γ-ray irradiation dose is too large to recognize any character peak ofF2-, F2,F2+, and F3 centers in the transmission and reflection spectra of the single crystal. LiF: Fn is opaque when wavelength is shorter than about 750 nm and has not reflection when wavelength is shorter than about 800 nm. The Fn center has a wide ESR peak with ΔBpp of 8 millitesla and the effect g-factor is 1.998±0.002.
keyword:γ-ray strong irradiation;single crystal LiF;complex color point defect;
Research article 01 May 2000
GU Mu,TANG Xue-Feng,TONG Hong-Yong,LIANG Ling,YAO Ming-Zhen,CHEN Ling-Yan,LIAO Jing-Ying,SHEN Ding-Zhong,YIN Zhi-Wen,WANG Jing-Cheng,XU Wei-Xin
A study on point defects in lead tungstate (PbWO4) by using positron annihilation lifetime method is presented. The measurement was carried out for the cases of untreated, vacuum-annealed, oxygen- annealed and La-doped PbWO4 crystals. It was found that the components r2, which reflect the positron annihilation in point defects, are different from each other for each case. Some tentative models for the defects are discussed.
keyword:Positron annihilation;PbWO4 crystal;Lead vacancy;Oxygen vacancy;
Research article 01 May 2000
SHEN Yi-Xiong,JIANG Dong-Xing,LU Xi-Ting,XIA Zong-Huang,SHEN Ding-Yu
Stopping powers for Ge ions (3.5 MeV~8.0 MeV) in Al foil were measured with RBS (Rutherford backscattering) technique and determined with a new method. Our results are much smaller than the values predicted by the TRIM code and LSS theory.
keyword:Stopping powers;Ge ions;Al foil;RBS technique;
Research article 01 May 2000
ZHANG Jing-Ping,CHEN Chang-Chun,LIU Jing-Hua,ZHU De-Zhang,XIE Dong-Zhu,PAN Hao-Chang
The oxidation of Si0.5Ge0.5 alloy has been investigated at the temperatures of 800°C and 900°C. Rutherford backscattering spectroscopy has been employed to determine the composition and thickness of the oxide layers. Only Si0.5Ge0.5O2 layer formed during the oxidation at 800°C, whilst three layers, Si0.5Ge0.5O2, SiO2 and Ge, are existed after the oxidation at 900°C. Experimental results are interpreted by adding a germanium flux F4 in Deal-Grove oxidation model of Silicon.
keyword:Si0.5Ge0.5 alloy;Wet oxidation;Ratherford backscatteing spectroscopy (RBS);
Research article 01 May 2000
HAN Zhao-Hui,ZHAO Zi-Qiang
Embedded cluster samples Ge:CaF2 and Sn:CaF2 with different sizes less than 8nm were produced and their optical properties were examined. Electron diffraction reveals that the clusters' structures are crystallites and compared with the bulk Germanium and Stannum, lattice constants expand about 4.7% in the case of Ge:CaF2 and 5.2% of Sn:CaF2. Optical absorption and photoluminescence spectra of these samples show good agreement with the Quantum-Confinement-Effect(QCE) theory. With the decreasing of the cluster's size, the energy gap broadens and the absorption edge blueshift is observed, and the absorption edge also shifts with the changing of the fraction of Sn and Ge. The XPS results show that in the cluster state, the binding energy becomes higher.
keyword:Optical absorption;Embedded cluster;Crystallite;
Research article 01 May 2000
FAN Kuan-Jun,FENG Guang-Yao,PEI Yuan-Ji,WANG Xiang-Qi
Hefei synchrotron radiation Light Source (HLS) is a low energy Synchrotron Radiation (SR) facility. The SR produced from the HLS is in a series of pulses with a strict time structure. To meet some experiments which need long interval SR pulses, a new method, local vertical bump, was proposed. Physical calculations and numerical simulations have been done to demonstrate its feasibility.
keyword:Bump orbit;Time structure;Trim coil;Kicker;
Research article 01 May 2000
SUN Bao-Gen,WANG Jun-Hua,LU Ping,FANG Zhi-Gao,GAO Yun-Feng
The beam diagnostic instrumentation for the Heifei Light Source (HLS) is described. It provides sufficient parameters for machine study during the commisioning and common operation. The measured results are presented.
keyword:Beam position monitor;Bunch length;Beam measurement;DCCT Beam profile monitor;Tune;
Research article 01 May 2000
DIAO Cao-Zheng,XU Hong-Liang,JIA Qi-Ka,LI Ge,LI Jing-Yi,LI Wei-Min,ZHOU An-Qi,LIU Gong-Fa,LI Yong-Jun,YAO Cheng-Gui,HE Duo-Hui
The measured fields of the optical klystron in NSRL (National Sychrotron Radiation Laboratory) are given, including the distribution on the axis, and the integrated field distribution. The harmonic magnet field and the spectra of the spontaneous emission are analyzed, and the multiple field is presented by fitting the diagram. The influence of the integrated field on the close orbit of the beam and on the operation parameters of the storage ring, and the compensation in the experiment are also discussed.
keyword:Optical klystron;Integrated field;Multiple field;
Research article 01 May 2000
LI Jing-Yi,LIU Gong-Fa,LI Wei-Min,DIAO Cao-Zheng,ZHOU An-Qi,LI Yong-Jun
The control system of HLS (Hefei Light Source) is based on EPICS. The control data is held in a distributed database, which resides in several IOCs. An EPICS tool, AR, is used to archive the control data. A data management system is developed to manage the archived data. A number of CGI programs make it easy to access the data via WWW, and the programs also provide several functions for analyzing the data. The results can be displayed in various modes.
keyword:Control system;Database;CGI programming;
