Transient radiation effects in CMOS inverters fabricated on SIMOX and BESOI wafers

Zhu Shi-Yang，

Lin Cheng-Lu，

Li Jin-Hua

Nuclear Science and Techniques

Vol.7, No.4

pp.247-248

Published in print 01 Nov 1996

45400

CMOS inverter circuits are successfully fabricated on thin film SIMOX wafers and thick film BESOI wafers. The output voltage variation is measured with a pulse of γ-ray radiation. Compared with bulk silicon CMOS circuits, SOI circuits have improved the transient radiation hardness significantly.

Transient radiation effectsSIMOXBESOICMOS

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