RADIATION EFFECT ON FLUORINATED SiO2 FILMS

RADIATION EFFECT ON FLUORINATED SiO₂ FILMS

Zhang Guoqiang，

Yan Rongliang，

Yu Xuefeng，

Gao Wenyu，

Ren Diyuan，

Zhao Yuanfu，

Hu Yuhong，

Wang Yingmin

Nuclear Science and Techniques

Vol.5, No.2

pp.124-128

Published in print 01 May 1994

22600

A systematic investigation of γ radiation effects in gate SiO₂ as a function of the fluorine ion implantation conditions was performed. It has been found that the generation of interface states and oxide trapped charges in fluorinated MOSFETs depends strongly on implantation conditions. The action of F in oxides is the conjunction of positive and negative effects. A model by forming Si-F bonds to substitute the other strained bonds which easily become charge traps under irradiation and to relax the bond stress on Si / SiO₂ interface is used for experimental explanation.

Threshold voltageOxide trapped chargeInterface stateRadiation

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