Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS

Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure

ZHU Ming，

LIN Qing，

LIU Xiang-Hua，

LIN Zi-Xin，

ZHANG Zheng-Xuan，

LIN Cheng-Lu

Nuclear Science and Techniques

Vol.14, No.2

pp.119-122

Published in print 01 May 2003

CLC：TN305.3,TN403

23000

An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current levels. In this paper a novel solution to reduce the self-heating effect is proposed, based on N⁺ and O⁺ co-implantation into silicon wafer to form a new buried layer structure. This new structure was simulated using Medici program, and the temperature distribution and output characteristics were compared with those of the conventional SOI counterparts. As expected, a reduction of self-heating effect in the novel SOI device was observed.

SOISelf-heating effectCo-implantationMedici simulation

References

[1]

Yoshimi M, Hazama H, Takahashi M et al. IEEE Trans Electron Devices, 1989, 36: 493-503

[2]

Kleiner M B, Kuhn S A, Weber W. 25th European Solid State Device Research Conference, 1995, 122-123

[3]

Su L T, Chung J E, Antoniadis D A et al. IEEE Trans Electron Devices, 1994, 41(1): 69-71

[4]

Udrea F, Milne W, Popescu A. Electron Lett, 1997, 33: 907-909

[5]

McDaid L J, Hall S, Mellor P H et al. Electron Lett, 1989, 25(13): 827-828