1 Kasper E ed. Properties of strained and relaxed silicon germanium, INSPEC. London : the Institute of Electrical Engineering , 1995
2 People R, IEEE J. Quantum Electron. 1986, 22: 1696
3 Crabble E F, Comfort J H, Lee W et al . IEEE Electron Device Letter, 1992, 13: 259
4 Houghton D C, Gibbing C J, Tuppen C G et al . Appl Phys Lett, 1990, 56: 460
5 Houghton D C, Gibbing C J, Tuppen C G et al . Thin Solid Films, 1989, 183: 171
6 Tapfer L, Ploog K. Phy Rev B, 1989, 40: 9802
7 Chu W K, Mayer J W, Nicolet M A. Backscattering spectrometry. New York : Academic Press , 1978
8 Siddiqui M. Pathak A P, Sundaravel B et al . Nucl Instr Meth, 1998, B142: 387
9 Chilton B T, Robinson B J, Thompson D A et al . Appl Phys Lett, 1989, 54: 42
10 Rodriguez A, Rodriguez T. J Appl Phys, 1997, 82(6): 15, 2887
11 Tu K N, Mayer J W, Feldman L C. Electronic thin film science for electronical engineers and materials scientists. New York : Macmillan , 1992. 407
12 Dismukes J P, Csepregi L, Seidel H. J Phys Chem, 1964, 68: 302
13 Lindgren A C, Chen C, Zhang S L et al . (Submitted to J Appl Phys)
14 Timm A, Zimmermann W, Kollewe D. Nucl Instr Meth, 1982, B194: 175
15 Gossmann H j, Davidson B A, Gualtier G J. J Appl Phys, 1989, 66(4): 15, 1687
16 Hollander B, Mantl S et al . J Mater Res, 1989, 4: 163
17 Iyer S S, LeGoues F K. J Appl Phys, 1989, 65: 4693
18 Van de Walle G F A, Van Ijzendoorn L J, Van Gorkum . Thin Solid Films, 1990, 183: 183
