Radiation-induced plasmons in Si-SiO2

Radiation-induced plasmons in Si-SiO₂

LIU Changshi

Nuclear Science and Techniques

pp.1-4

Published in print 01 Feb 1999

29600

The first level plasmons of Si in the pure Si state (corresponding to bonding energy (BE) of 116.95 eV) and in the SiO₂ state (corresponding to BE of 122.0 eV) of Si-SiO₂ prepared by irradiation hard and soft processing were studied with XPS before and after ⁶⁰Co radiation. The experimental results indicate that there was an interface consisting of the two plasmons, this interface was extended by ⁶⁰Co radiation, the fractions of the plasmon for Si in the Si-SiO₂ were changed with the variation of radiation dosage, the difference of the change in fraction of plasmons for the two kinds of samples was that the soft varied faster than hard, the change of concentrations in plasmons for both hard and soft Si-SiO₂ irradiated in positive bias field were greater than that in bias-free field. The experimental results are explained from the view point of energy absorbed in form of quantization.

PlasmonSi-SiO2Radiation doseRadiation bias field

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