The characterization of low energy molecular hydrogen ion-induced defects in synthetic diamond by optical absorption

Ma Zhong-Quan，

Zheng Yu-Feng，

Aoki Y，

Naramoto H

Nuclear Science and Techniques

Vol.9, No.2

pp.102-108

Published in print 01 May 1998

24700

The results of optical absorption analysis of the synthetic diamonds (type Ib) which were implanted with 40 keV molecular hydrogen ions at doses of 10¹⁵〜10¹⁷ H/cm² (at 100 K), showed that the increase of optical density (OD) of modified layer (〜140 nm) in UV-VIS region was dependent upon the damage level caused by ion implantation process. The range of relative optical band gap (E_{r, opt}) around 2.0 eV suggested that an amorphous carbon network structure like a-C film, which probably contains some localized subtetrahedral-coordinated clusters embedded in the fourfold (sp³) sites, was tentatively found in this layer, basing on the optical gap of carbon materials. The evolution of Er,opt with ion fluence indicated that no more hydrogenated carbon compositions were produced in as-implanted samples, while the increase of Er,opt with annealing temperature was very similar to that of hydrogen content dependence of Eopt in hydrogenately amorphous carbon (a-C:H). In addition the optical inhomogeneity of type Ib diamond has been revealed by a 2-dimension topograph in transmission mode at λ=430nm.

Optical absorptionDiamondHydrogen ion implantation

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