Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs

Ren Di-Yuan，

Yu Xue-Feng，

Lu Wu，

Gao Wen-Yu，

Zhang Guo-Qiang，

Yan Rong-Liang

Nuclear Science and Techniques

Vol.7, No.3

pp.183-186

Published in print 01 Aug 1996

22300

The model separating the effects of radiation-induced oxide-trapped charge and interface state charge on mobility can be better manifested the mechanisms of the radiation-induced mobility degradation in NMOSFET and PMOSFET. The comparison between the model and the experiment shows that the Coulomb scattering role of interface defects to hole is larger than to electrons.

MOSFETMathematical modelsMobilityPhysical radiation effect

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