THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE- CHANNELING TECHNIQUE

Liu Huizhen，

Sheng Kanglong，

Zhu Dezhang，

Yang Guohua，

Zhu Fuying，

Cao Jianqing，

Tang Lijun

Nuclear Science and Techniques

Vol.1, No.3

pp.156-160

Published in print 01 Aug 1990

23801

A combined PIXE- RBS channeling measurement system to examine III- V compound semiconductors has been established. Preliminary results on studying Si⁺ and Te⁺ implanted GaAs have been presented and discussed.

Ion implantationCompound semiconductorGaAsPIXE- channeling technique

REFERENCES

[1]

S.J. Pearton et al., Nucl. Instr. Meth., B19/20 (1987), 369.

[2]

F.H. Eisen, Radiat. Eff., 47 (1980), 99.

[3]

H. Nishi, Nucl. Instr. Meth., B7/8 (1985), 395.

[4]

D.K. Sadana, Nucl. Instr. Meth., B7/8 (1985), 375.

[5]

R.S. Bhattacharya and P.P. Pronko, Appl. Surf. Sci., 18 (1984), 1.

[6]

J.S. Williams, Personal communication.