Nuclear Science and Techniques

BORON PROFILING IN SILICON BY ¹¹B(p,α) ⁸Be REACTION AT E_P= 2.4 MeV

Cao Jianqing，

Zhu Dezhang，

Yang Guohua，

Liu Huizhen，

Zhu Fuying，

Pan Haochang

Nuclear Science and Techniques

Vol.1, No.1-2

pp.62-64

Published in print 01 May 1990

4600

The reaction ¹¹B(p, α) ⁸Be was used to profile boron concentration in silicide. The energy of incident proton of 2.4 MeV was selected. The samples were Ti silicide implanted with 80 keV and 230 keV BF₂. The experimental results indicate that the behaviour of boron is different from that of fluorine during silicide formation.

Boron profilingIon implantation

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BORON PROFILING IN SILICON BY 11B(p,α) 8Be REACTION AT EP= 2.4 MeV

BORON PROFILING IN SILICON BY ¹¹B(p,α) ⁸Be REACTION AT E_P= 2.4 MeV