The MeV proton non- Rutherford elastic backscattering (PEBS) has been used to measure a variety of low Z element- containing samples including thick SiC film, N implanted stainless steel, thin films interface (Ag on Cu) and very deep (4µ m) SOI structure by high energy oxygen implantation. It is demonstrated that by using the significant enhancement of cross sections for low Z elements and selecting the proper energy region of the excitation curves both the sensitivities for detecting low Z elements and the accessible depth of the PEBS technique are remarkablely improved over the ordinary RBS method. The disadvantages of the PEBS as compared with RBS as well as high energy He elastic backscattering (HeEBS) are also discussed.