Rutherford backscattering spectroscopy (RBS) with channeling technique has been used to analyze the damage and its annealing of Si⁺ and P⁺ implanted InP:Fe. 150 keV Si ions and 160 keV P ions were implanted with doses ranging from 1×10¹³ to 1×10¹⁵/ cm² at room temperature, 200℃ and 77K. Thermal annealing was performed in a conventional open tube furnace under flow of pure N₂ for 15 minutes. Annealing temperature was chosen from 150℃ to 800℃. It was found that a dose of 8×10¹³/cm² Si⁺ was sufficient to produce an amorphous layer at room temperature and its epitaxial regrowth takes place at temperature below 150 ℃. The epitaxial regrowth of amorphous layer produced by 1×10¹⁴/cm² Si ions occurs from both substrate and surface while that produced by co-implantation of 1×10¹⁴/cm² Si ions with the same dose of P ions takes place from substrate only. It was also noticed that for the former sample, its amorphized layer can be nearly completely recrystallized by epitaxial growth at 650 ℃, but for the latter much residual disorder remains even after annealing at 750 ℃. As for 77K implant at dose as low as 5×10¹³/cm², Si ions begin to produce an amorphous layer that can be wholly reordered at 750℃. Samples implanted at 200℃ remain crystalline only with small fraction of disorder due to self-annealing effect during the implantation. The damage annealing in the implanted layer corresponds to the change of electrical parameters got from Hall measurements.