1 Introduction
An X-ray free-electron laser is regarded as a 4th generation light source [1-4], with the characteristics of high intensity, exceptional brightness, ultrashort pulse duration, and spatial coherence [5-7]. The Shanghai Soft X-ray Free-Electron Laser Test Facility (SXFEL-TF) requires seven sets of C-band klystrons to provide microwaves with high power [8-9]. The main specifications of the pulse modulator power supply are a pulse current of 320 A, pulse voltage of 350 kV, flattop width of 3 µs, and repetition rate of 10 Hz [10]. To satisfy the modulator requirements, a durable and dependable high-power pulse transformer with exquisite workmanship is indispensable. The values of design parameters of a C-band pulse transformer are listed in Table 1.
Primary side | Secondary side | ||
---|---|---|---|
Items | Value | Items | Value |
Pulse voltage (kV) | 22 | Pulse voltage (kV) | 350 |
Pulse current (A) | 5100 | Pulse current (A) | 320 |
Leading edge (μs) | 0.5 | Leading edge (μs) | 0.9 |
Falling edge (μs) | 0.5 | Falling edge (μs) | 1.2 |
Flat-top (μs) | 5.5 | Flattop (μs) | 3 |
FWHM (μs) | 6 | Flattop ripple (%) | 0.25 |
Repeat rate (Hz) | 10 Hz | Flattop droop (%) | 2 |
The detailed schematic circuit of the modulator with the pulse transformer is shown in Fig. 1. In this study, the performance parameters of high-voltage pulse transformers in other facilities are investigated [11-13], and a detailed equivalent circuit model of a high-voltage pulse transformer is presented. Based on the analyses of the equivalent circuit model, an optimized design method is also presented. Furthermore, experimentally measured data and waveforms are provided.
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2 Pulse transformer modeling
2.1 Equivalent circuit of pulse transformer
In a linear modulator, a pulse transformer is designed as a step-up transformer used for transmitting pulsed power. We apply a typical equivalent circuit, as presented in Fig. 2, to analyze a pulse transformer.
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Term K denotes the coupling coefficient of the pulse transformer (K=1 in the ideal case),
ITEM | TOSHIBA | SACLA | PAL |
---|---|---|---|
Primary inductance (µH) | 200 | 560 | 600 |
Leakage inductance (µH) | 3 | 3 | 2.8 |
Load capacitance (nF) | -- | 30 | -- |
Pulse width (µs) | 5 | 5 | 10 |
Flattop droop (%) | 5.2 | 1.9 | 3.1 |
2.2 Shorten leading edge
In general, we can neglect unrelated parameters, such as Lp, Lt, and Ct when analyzing the leading edge [21]. In this case, the equivalent circuit for leading edge analysis is shown in Fig. 3. In a line-type modulator, the pulse forming network (PFN) impedance is usually designed to be equal to the load impedance. The leading edge can be calculated using Eq. (1). This depends on the distributed capacitance and leakage inductance [22].
-201907/1001-8042-30-07-007/alternativeImage/1001-8042-30-07-007-F003.jpg)
where
σ | y(σ) |
---|---|
0.5 | 0.299 |
0.6 | 0.303 |
0.7 | 0.311 |
0.8 | 0.329 |
0.9 | 0.347 |
1.0 | 0.374 |
1.1 | 0.404 |
1.2 | 0.431 |
Fig. 4 shows the leading edge for a certain range of σvalues. As can be derived from the theories, for a specified value of distributed capacitance, a larger leakage inductance leads to a slower leading edge, and for a certain value of leakage inductance, a small distributed capacitance leads to a smaller overshoot. For instance, in the case of Cd = 20 nF and Le = 2 µH, overshoot is approximately 2% compared with the case of Cd = 30 nF and Le = 2 µH. The leading edge increases by approximately 200 ns for Cd = 30 nF and Le = 3 µH compared with the case of Cd = 30 nF and Le = 2 µH.
-201907/1001-8042-30-07-007/alternativeImage/1001-8042-30-07-007-F004.jpg)
We use Eq. (2) to calculate the leakage inductance. We can also measure it using a precision LCR meter [23].
where
We can apply corresponding methods to decrease the leakage inductance—for instance, using closed core, cone-shape windings, and close bifilar winding. The calculated and measured values of leakage inductance of this pulse transformer are 2.25 and 2.3 µH, respectively.
The distributed capacitance includes a stray capacitance between the primary and secondary windings and a stray capacitance in the klystron. The distributed capacitance between the primary and secondary windings can be calculated using Eq.(3). We can also measure the total distributed capacitance using a precision LCR meter.
where
2.3 Flattop droop and primary inductance
Flattop droop depends on the inductance of the primary winding. The equivalent circuit used for flattop droop analysis is shown in Fig. 5
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We use Eq. (4) to calculate the voltage across the resistance RL.
where
Equation (5) can be derived from the principle of Kirchhoff laws.
where
The initial conditions (t=0) are given by Eq.(6).
Based on Equations (4), (5), and (6), the voltage
where
The flattop droop D is defined in Eq. (8).
In a linear modulator, we usually design the PFN output impedance to be matched to the load impedance. The flattop droop D is determined by the primary inductance, where the relationship between primary inductance and flattop droop is given in Eq. (9).
Fig. 6 shows the primary inductance versus flattop droop for the C-band klystron pulse transformer. Fig. 7 presents a graphical view of flattop droop with different values of primary inductance in the simulation of the C-band pulse transformer. As shown in Fig. 7, a primary inductance of 100 µH results in approximately 10.8% flattop droop, a primary inductance of 300 µH results in approximately 3.6% flattop droop, and a primary inductance of 500 µH only results in approximately 2.2% flattop droop.
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The primary inductance is associated with the core material permeability, winding turns, core size, and magnet flux pass length [24]. It can be calculated using Eq.(10).
where
In general, core materials with high permeability are preferred. High permeability ensures the fewest turns to attain our desired magnetizing inductance [25]. Fewer turns lead to lower leakage inductance, smaller distributed capacitance, and smaller winding resistance. Silicon steel and ferrite are the most commonly used materials for the design of a high-power pulse transformer core. In our design, the primary inductance is 226 µH. Thus, we can calculate the flattop droop as 5%.
2.4 Reduce flattop ringing
Flattop ringing is determined by the parasitic capacitance between the primarily coil and ground Ct and the lead inductance
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In summary, the main parameters of the C-band high-power pulse transformer are listed in Table 4.
Items | Value |
---|---|
Primary inductance (µH) | 226 |
Secondary inductance (mH) | 58.50 |
Leakage inductance (µH) | 2.3 |
Primary impedance (mΩ) | 3.9 |
Secondary impedance (mΩ) | 1031 |
Load capacitance (nF) | 40 |
Parasitic capacitance between the core and secondary coil (pF) | 136 |
Parasitic capacitance between the primary and secondary coils (pF) | 140 |
3 Mechanical design
Using parameter analysis, we optimize and fabricate the pulse transformer. Fig. 10 shows the geometrical structure of the pulse transformer. The transformer is designed to have two secondary windings. To reduce the distributed coupling parameters and reduce the risk of flashover, the insulation distances between primary coil and secondary coil are increased between the input and output points. The transformer core shape is almost rectangular, apart from the corners, which are rounded. The cores are made of silicon steel sheet with high permeability. The primary winding is composed of two coils in parallel, each having six turns. The secondary winding of the transformer consists of 96 turns.
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4 Test results and discussion
The pulse transformer is installed in a metallic tank filled with condenser oil, which is used as a coolant and insulator. Fig. 11 shows a picture of the klystron and oil tank with the pulse transformer inside. After the system was installed, an experimental test was performed. Fig. 12 presents the typical measured waveforms with a klystron load: one illustrates the pulse current obtained using a precise pulsed current sensor (0.1 V/A), and the other illustrates the pulse voltage measured using a high voltage divider (9300:1). Table 5 summarizes the test parameters of the typical measured waveforms of the C-band high-power pulse transformer.
Items | Value | Items | Value |
---|---|---|---|
Pulse voltage (kV) | 350 | Pulse current (A) | 317 |
Leading edge (ns) | 746 | Falling edge (µs) | 1.3 |
Flattop (µs) | 3.1 | FWHM (µs) | 5.6 |
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Based on our model analysis in this study,
-201907/1001-8042-30-07-007/alternativeImage/1001-8042-30-07-007-F013.jpg)
Our work aims to elaborate the analysis of a pulse transformer by using a circuit model. Using this circuit model, we can determine the relationship between the distribution parameters of the pulse transformer and the output pulse shape. The analysis of the circuit model shows how to obtain a shorter leading edge, smaller flattop ringing, and smaller flattop droop. The results can be used to guide mechanical design to obtain appropriate circuit parameters.
5 Conclusion
A pulse transformer as a primary device in a high-gradient accelerating structure has been studied in the Shanghai Institute of Applied Physics. A detailed equivalent circuit modeling a high-power pulse transformer was presented, especially for shortening the leading edge and reducing the flattop ringing and droop. Subsequently, its validity was confirmed using LTspice code and through experiment using the SXFEL high-power microwave system. The results obtained from the experiments and theoretical analysis were compared. Based on the circuit analysis, we optimized our mechanical design. It was indicated by relevant test results that this C-band high-power pulse transformer satisfied the requirements of a practical target. The circuit models and analysis methodology can be applied in the research and development of future high-power pulse transformers.
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