Probing Co/Si interface behaviour by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM)

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS

Probing Co/Si interface behaviour by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM)

J. S. PAN，

R. S. LIU，

E. S. TOK

Nuclear Science and Techniques

Vol.17, No.4

pp.202-211

Published in print 20 Aug 2006

DOI：10.1016/S1001-8042(06)60038-9

CLC：TN304.2+4,TH744.11+2,TH742.9

43200

In this work, we investigate the Co-Si reaction, the Co growth mode at room temperature, diffusion behaviour as well as morphology evolution during annealing on both H-terminated and clean Si(001) and Si(111) surfaces. From in-situ X-ray photoelectron spectroscopy (XPS) investigation, "Co-Si" reaction appears to occur on both H-terminated and clean surfaces at room temperature (RT) and the silicide crystallinity is improved upon annealing. Co growth mode on H-terminated Si surfaces occurs in a pseudo layer-by-layer manner while small close-packed island growth mode is observed on the clean Si surface. Upon annealing at different temperatures, Co atom concentration decreases versus annealing time, which in part is attributed to Co atoms inward diffusion. The diffusion behaviour on both types of surfaces demonstrates a similar trend. Morphology study using ex-situ atomic force microscopy (AFM) shows that the islands formed on Si(001) surface after annealing at 700 °C are elongated with growth directions alternate between the two perpendicular [110] and [110] directions. Triangular islands are observed on Si (111) surface.

CobaltSiliconMetal-semiconductor interfacial reactionHydrogen terminationGrowth modeDiffusionSurface morphologyXPSAFM

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