Electronic structure of In2O3 nanowires synthesized at low temperature

LOW ENERGY ACCELERATOR AND RADIATION APPLICATIONS

Electronic structure of In₂O₃ nanowires synthesized at low temperature

YUAN Gang，

GAO Jing，

SUN Xuhui，

ZHOU Xingtai

Nuclear Science and Techniques

Vol.22, No.5

pp.272-276

Published in print 20 Oct 2011

DOI：10.13538/j.1001-8042/nst.22.272-276

34000

In₂O₃ nanowires with uniform morphology and single crystalline structure were synthesized at low temperature of 400ºC~450ºC using InSb as the precursor via VLS mechanism. The nanowires have uniform diameter of about 40 nm and are up to tens of micrometres in length and grew along the [100] direction as established by high resolution electron microscopy. The electronic and local structures of In₂O₃ nanowires, compared to that of In₂O₃ powder, have been studied with X-ray absorption fine structure (XAFS) at In K-edge and O K-edge. The XAFS results reveal the stronger In-O bonding in In₂O₃ nanowires compared to bulk In₂O₃.

In2O3 nanowiresLow temperature synthesisXAFSElectronic structure

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